PART |
Description |
Maker |
RG.02.01.3000W |
UV and Vandal resistant ABS housing
|
Taoglas antenna solutio...
|
MPI002 |
Stainless Steel Illuminated Vandal Resistant
|
Elektron Components Ltd.
|
PV6 |
Vandal and Water Resistant Long Life Expectancy
|
lambind
|
PV2H240NGMO1 PV2H240GGMO1 PV2H240SGMO1 PV2H240BGMO |
VANDAL RESISTANT VANDAL RESISTANT
|
E-SWITCH
|
SCHURTERINC-1241.6612.1110000 1241.6631.1110000 12 |
Vandal Resistant Pushbutton Switch; Circuitry:SPST-NO SPST-NC; Switch Operation:(On); Contact Current Max:0.1A; Approval Categories:IP 67 Degree of Protection, IK 07 Shock Resistance according To DIN EN 50102
|
SCHURTER INC
|
1T405 |
Vandal Resistant Pushbutton Switch; Illumination:Illuminated; Actuator Style:Round; Actuator Diameter:22mm; Circuitry:SPST; Switch Operation:Push to Make; Switch Terminals:Solder Lug; Contact Current Max:50mA Variable Capacitance Diode
|
SONY[Sony Corporation]
|
1T399 |
SWITCH, VANDAL RESISTANT SEALED; Switch function type:SPDT Mom; Voltage, contact AC max:250V; Temp, op. max:70(degree C); Temp, op. min:-20(degree C); Diameter, panel cut-out:25.8mm; Length / Height, external:26.6mm; Current, RoHS Compliant: Yes Variable Capacitance Diode
|
SONY[Sony Corporation]
|
FSPYE234D1 FSPYE234F4 FN4873 FSPYE234R4 FSPYE234F |
From old datasheet system Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 9 A, 250 V, 0.215 ohm, N-CHANNEL, Si, POWER, MOSFET Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射,抗SEGR N沟道功率MOSFET(抗辐射沟道马鞍山场效应管)
|
INTERSIL[Intersil Corporation] Intersil, Corp.
|
MSM30LE MSM30PI MSM30RI MSM30ST |
Vandal-proof MSM switches
|
Schurter Inc.
|
PV0H2-401SG20 PV0H2-401SG21 PV0H2-4011G21 PV0H2-40 |
pV0 SerieS anti-Vandal Switch
|
E-SWITCH
|
G751 G750A |
Desktop Cases - ABS
|
List of Unclassifed Manufacturers
|
ENCL-KIT1 ENCL-KIT2 ENCL-KIT3 |
Tough ABS construction
|
rfsolutions.ltd
|